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Fix problems with LPC1768 EEPROM flash emulation (#12503)

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* Remove duplicate calls to PrepareSector

Some flash memory API calls require that a call to `PrepareSector` is done before use. However this call is already made by the LPC1768 framework so the calls in this code are not required.

* Ensure correct alignment of RAM buffer

The LPC176X flash API requires that the RAM buffer used for write operations must be word-aligned. This change ensures that this is the case.
This commit is contained in:
Andy Shaw 2018-11-22 07:03:32 +00:00 committed by Scott Lahteine
parent b738972e69
commit 4975b13b74
1 changed files with 1 additions and 3 deletions
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4
Marlin/src/HAL/HAL_LPC1768/persistent_store_flash.cpp
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@ -57,7 +57,7 @@ extern "C" {
#define EEPROM_ERASE (0xff) #define EEPROM_ERASE (0xff)
#define SLOT_ADDRESS(sector, slot) (((uint8_t *)SECTOR_START(sector)) + slot * EEPROM_SIZE) #define SLOT_ADDRESS(sector, slot) (((uint8_t *)SECTOR_START(sector)) + slot * EEPROM_SIZE)
static uint8_t ram_eeprom[EEPROM_SIZE]; static uint8_t ram_eeprom[EEPROM_SIZE] __attribute__((aligned(4))) = {0};
static bool eeprom_dirty = false; static bool eeprom_dirty = false;
static int current_slot = 0; static int current_slot = 0;
@ -92,7 +92,6 @@ bool PersistentStore::access_finish() {
if (--current_slot < 0) { if (--current_slot < 0) {
// all slots have been used, erase everything and start again // all slots have been used, erase everything and start again
__disable_irq(); __disable_irq();
PrepareSector(EEPROM_SECTOR, EEPROM_SECTOR);
status = EraseSector(EEPROM_SECTOR, EEPROM_SECTOR); status = EraseSector(EEPROM_SECTOR, EEPROM_SECTOR);
__enable_irq(); __enable_irq();
@ -100,7 +99,6 @@ bool PersistentStore::access_finish() {
} }
__disable_irq(); __disable_irq();
PrepareSector(EEPROM_SECTOR, EEPROM_SECTOR);
status = CopyRAM2Flash(SLOT_ADDRESS(EEPROM_SECTOR, current_slot), ram_eeprom, IAP_WRITE_4096); status = CopyRAM2Flash(SLOT_ADDRESS(EEPROM_SECTOR, current_slot), ram_eeprom, IAP_WRITE_4096);
__enable_irq(); __enable_irq();